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S852T / S852TW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
1
Features
* * * * * * * Low supply voltage Low current consumption e3 50 input impedance at 945 MHz Low noise figure High power gain Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
SOT-23
2 1
3 SOT-323
2
3
Electrostatic sensitive device. Observe precautions for handling.
19239
Applications
For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.
Mechanical Data
Typ: S852T Case: SOT-23 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: S852TW Case: SOT-323 Plastic case Weight: approx. 6.0 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part S852T S852TW 852 W52 Marking SOT-23 SOT-323 Package
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb 125 C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150 - 65 to + 150 Unit V V V mA mW C C
Document Number 85052 Rev. 1.4, 02-May-05
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S852T / S852TW
Vishay Semiconductors Maximum Thermal Resistance
Parameter Junction ambient
1) 1)
Test condition
Symbol RthJA
Value 450
Unit K/W
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu
Electrical DC Characteristics
Tamb = 25 C, unless otherwise specified Parameter Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage Test condition VCE = 12 V, VBE = 0 VCB = 8 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 5 mA, IB = 0.5 mA Symbol ICES ICBO IEBO V(BR)CEO VCEsat hFE 40 6 0.1 90 0.4 150 Min Typ. Max 100 100 1 Unit A nA A V V
DC forward current transfer ratio VCE = 3 V, IC = 1 mA
Electrical AC Characteristics
Tamb = 25 C, unless otherwise specified Parameter Transition frequency Test condition VCE = 3 V, IC = 1 mA, f = 500 MHz VCE = 2 V, IC = 1.5 mA, f = 500 MHz Collector-base capacitance Noise figure VCB = 1 V, f = 1 MHz ZS = ZSopt, f = 450 MHz, VCE = 2 V, IC = 0.5 mA ZS = ZSopt, f = 945 MHz, VCE = 3 V, IC = 1 mA ZS = ZSopt, f = 945 MHz, VCE = 2 V, IC = 1.5 mA Power gain VCE = 2 V, IC = 0.5 mA, f = 450MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz Collector current for fT max Real part of input impedance VCE = 2 V, f = 500 MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz Symbol fT fT Ccb Fopt Fopt Fopt Gpe @Fopt Gpe @Fopt Gpe @Fopt IC Re(h11e) Re(h11e) Min Typ. 4.7 5.2 0.25 1.1 1.8 2 11.5 10.5 12 3 50 50 Max Unit GHz GHz pF dB dB dB dB dB dB mA
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Document Number 85052 Rev. 1.4, 02-May-05
S852T / S852TW
Vishay Semiconductors Common Emitter S-Parameters
VCE/V IC/mA f/MHz LIN MAG 2 0.5 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 2 1.5 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 9.976 0.969 0.955 0.939 0.920 0.901 0.881 0.861 0.838 0.818 0.793 0.772 0.746 0.972 0.898 0.858 0.811 0.762 0.710 0.662 0.617 0.576 0.540 0.502 0.470 0.439 S11 ANG deg -3.8 -7.9 -11.7 -15.5 -18.9 -22.4 -25.8 -28.9 -32.3 -35.4 -38.8 -41.5 -45.1 -7.5 -14.5 -21.0 -27.0 -32.2 -36.8 -40.3 -43.8 -46.9 -50.0 -52.4 -54.8 -57.6 1.71 1.71 1.70 1.68 1.64 1.62 1.58 1.56 1.53 1.50 1.49 1.46 1.44 4.84 4.69 4.49 4.27 4.01 3.77 3.55 3.33 3.15 2.98 2.82 2.69 2.56 LIN MAG S21 ANG deg 174.9 168.9 163.3 157.7 151.9 147.2 142.2 137.6 133.1 129.4 125.1 121.3 117.2 170.9 161.7 153.1 145.1 137.8 131.3 125.3 120.0 115.1 110.7 106.5 102.8 99.0 0.015 0.029 0.044 0.058 0.070 0.082 0.093 0.104 0.114 0.121 0.130 0.138 0.148 0.016 0.031 0.045 0.057 0.067 0.077 0.085 0.093 0.099 0.106 0.113 0.118 0.123 LIN MAG S12 ANG deg 86.8 83.4 80.0 76.8 73.6 71.5 69.0 66.7 65.0 63.5 61.8 60.4 58.6 84.8 79.8 75.1 71.5 68.3 65.9 63.6 62.1 61.2 60.3 59.5 59.3 58.7 0.998 0.993 0.984 0.974 0.959 0.948 0.935 0.922 0.909 0.898 0.884 0.873 0.859 0.990 0.972 0.944 0.913 0.880 0.849 0.820 0.796 0.775 0.756 0.740 0.724 0.710 LIN MAG S22 ANG deg -2.3 -4.7 -6.7 -8.7 -10.6 -12.4 -13.9 -15.5 -17.2 -18.6 -19.7 -21.3 -22.6 -3.9 -7.4 -10.6 -13.1 -15.3 -16.8 -17.8 -18.7 -19.5 -20.3 -20.8 -21.4 -21.7
Document Number 85052 Rev. 1.4, 02-May-05
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S852T / S852TW
Vishay Semiconductors
Typical Characteristics (Tamb = 25 C unless otherwise specified)
50 40 30 20 10 0 0
13619
Ptot - Total Power Dissipation ( mW )
25
50
75
100
125
150
Tamb - Ambient Temperature ( C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
7000
f T - Transition Frequency ( MHz )
f = 500 MHz 6000 5000 4000 3000 2000 1000 0 0 1 2 3 4
3V 2V
V CE = 1 V
5
13620
I C - Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
Ccb - Collector Base Capacitance ( pF )
0.5 0.4 0.3 0.2 0.1 0 0
1
2
3
4
5
13622
V CB - Collector Base V oltage ( V )
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
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Document Number 85052 Rev. 1.4, 02-May-05
S852T / S852TW
Vishay Semiconductors
VCE = 8 V, IC = 25 mA, Z0 = 50 S11
j j0.5 j2 150 j0.2 j5 100 120 500 30
S12
90 900 1300 MHz
0
0.2
0.5
1
2
5
100
180
0.04
0.08
0
1300 MHz -j0.2 900 -j0.5
13 562
500 -j2
-j5 -150 -30
-120 -j
13 563
-60 -90
Figure 4. Input Reflection Coefficient
Figure 6. Reverse Transmission Coefficient
S21
90 120 500 900 1300 MHz 100 180 60
S22
j j0.5 30 j0.2 j5 5 100 j2
150
2
4
0
0
0.2
0.5
1
2 1300 MHz
-j0.2 -150 -30 -j0.5 -120
13 564
-j5
-j2 -j
-90
-60
13 565
Figure 5. Forward Transmission Coefficient
Figure 7. Output Reflection Coefficient
Document Number 85052 Rev. 1.4, 02-May-05
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S852T / S852TW
Vishay Semiconductors Package Dimensions in mm (Inches)
1.15 (.045)
0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 2.6 (.102) 2.35 (.092)
0.95 (.037)
ISO Method E
3.1 (.122) 2.8 (.110) 0.4 (.016) 3
1.43 (.056) 1.20(.047)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
2.0 (0.079)
1 0.95 (.037)
2 0.95 (.037) 0.95 (0.037) 0.95 (0.037)
17418
Package Dimensions in mm (Inches)
0.10 (0.004)
1.00 (0.039)
0.10 (0.004)
SO Method E
10
Mounting Pad Layout
2.05 (0.080) 0.39 (0.015)
0.9 (0.035)
1.25 (0.049) 2.00 (0.078)
2.0 (0.079)
0.30 (0.012) 1.3 (0.051)
0.95 (0.37)
0.95 (0.037)
96 12236
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Document Number 85052 Rev. 1.4, 02-May-05
S852T / S852TW
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85052 Rev. 1.4, 02-May-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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